Move vram functions into separate file

baremetal_gamarjoba.asm

@@ -1,5 +1,4 @@
 %include "multiboot_header.asm"
-
 %include "x86_vram.asm"
 
 %define stack_size 0x1000
@@ -53,56 +52,4 @@ halt:
     hlt
     jmp halt
 
-; first argument is row, 1 byte
+%include "x86_vram_functions.asm"
-; second argument is column, 1 byte
-; third argument is cell, 2 bytes
-write_to_coord:
-    push ebp
-    mov ebp, esp
-    push edi
-    push ebx
-
-    ; should do the same thing
-    ;call get_vram_offset
-    ;mov edi, eax
-    mov edi, X86_VRAM
-    mov ebx, [ebp+8]
-    imul ebx, X86_COLS*2
-    add ebx, [ebp+12]
-    add ebx, [ebp+12]
-    add edi, ebx ;edi now has effective address
-
-    mov ebx, [ebp+16] ;; load word into ebx
-    mov [edi], bx
-
-    pop ebx
-    pop edi
-    mov esp, ebp
-    pop ebp
-    ret
-
-; takes character/attribute in edi
-; writes it to all cells on screen
-clear:
-    push ebp
-    mov ebp, esp
-    push edi
-
-    ; movzx - move and zero-extend
-    ; this trick lets us write half as many doublewords to vram
-    movzx eax, word [ebp + 8]
-    mov edx, eax
-    shl eax, 16
-    or eax, edx
-
-    ; stosd stores eax at the address in edi (here, vram)
-    ; and then increments edi
-    ; rep stosd  repeats stosd while ecx is nonzero
-    mov edi, X86_VRAM
-    mov ecx, X86_COLS * X86_ROWS / 2
-    rep stosd ; "A REP STOS instruction is the fastest way to initialize a large block of memory."
-
-    pop edi
-    mov esp, ebp
-    pop ebp
-    ret

include.c

@@ -6,6 +6,14 @@ int get_vram_offset() {
 }
 
 void c_entry() {
+    /*
     int space = 0x26 | (0xf0 <<  8); //ascii ampersand white on black
     write_to_coord(22,70, space);
+    */
+
+    for (int i = 0; i < 26; i++) {
+        int space = 'a' + i | (0xf0 << 8);
+        write_to_coord(12, i, space);
+    }
+
 }

x86_vram_functions.asm

@@ -0,0 +1,55 @@
+%include "x86_vram.asm"
+
+; first argument is row, 1 byte
+; second argument is column, 1 byte
+; third argument is cell, 2 bytes
+write_to_coord:
+    push ebp
+    mov ebp, esp
+    push edi
+    push ebx
+
+    ; should do the same thing
+    ;call get_vram_offset
+    ;mov edi, eax
+    mov edi, X86_VRAM
+    mov ebx, [ebp+8]
+    imul ebx, X86_COLS*2
+    add ebx, [ebp+12]
+    add ebx, [ebp+12]
+    add edi, ebx ;edi now has effective address
+
+    mov ebx, [ebp+16] ;; load word into ebx
+    mov [edi], bx
+
+    pop ebx
+    pop edi
+    mov esp, ebp
+    pop ebp
+    ret
+
+; takes character/attribute in edi
+; writes it to all cells on screen
+clear:
+    push ebp
+    mov ebp, esp
+    push edi
+
+    ; movzx - move and zero-extend
+    ; this trick lets us write half as many doublewords to vram
+    movzx eax, word [ebp + 8]
+    mov edx, eax
+    shl eax, 16
+    or eax, edx
+
+    ; stosd stores eax at the address in edi (here, vram)
+    ; and then increments edi
+    ; rep stosd  repeats stosd while ecx is nonzero
+    mov edi, X86_VRAM
+    mov ecx, X86_COLS * X86_ROWS / 2
+    rep stosd ; "A REP STOS instruction is the fastest way to initialize a large block of memory."
+
+    pop edi
+    mov esp, ebp
+    pop ebp
+    ret